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| SHINDENGEN General Purpose Rectifiers SIL Bridges S1VBA60 600V 1A FEATURES *oe Small Single In-Line(:SIL)Package *oe High IFSM *oe Applicable to Automatic Insertion APPLICATION OUTLINE DIMENSIONS Case : 1V Unit : mm *oe power supply Switching *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -40*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage V 600 RM IO Average Rectified Forward Current50Hz sine wave,R-load,On glass-epoxy substrate, Ta=25*Z 1 Peak Surge Forward Current I 50 FSM50Hz sine wave,Non-repetitive 1cycle peak value, Tj=25*Z I2 1ms*...t*10ms* Tj=25*Z t Current Squared Time @ 10 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions V I =0.5A, Pulse measurement,Rating of per diode Forward Voltage FF I Reverse Current R RM R V=V , Pulse measurement,Rating of per diode Thermal Resistance AEjl junction to lead AEja junction to ambient Unit *Z *Z V A A 2 As Ratings Unit Max.1.05 V Max.10 EA Max.16 *Z/W Max.62 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S1VBAx 10 Forward Voltage Forward Current IF [A] 1 Tl=150C [TYP] Tl=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S1VBAx 2 Forward Power Dissipation SIN Forward Power Dissipation PF [W] 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 Average Rectified Forward Current IO [A] Tj = 150C Sine wave S1VBAx 1.2 Derating Curve Average Rectified Forward Current IO [A] 1 l PCB Glass-epoxy substrate Soldering land 3mm 0.8 l = 10mm l = 2mm 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM Sine wave R-load Free in air S1VBAx 80 Peak Surge Forward Capability IFSM 70 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 60 non-repetitive, sine wave, Tj=25C before surge current is applied 50 40 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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